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PDF PBSS4420D Data sheet ( Hoja de datos )

Número de pieza PBSS4420D
Descripción NPN low VCEsat (BISS) transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 01 — 21 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
PNP complement: PBSS5420D.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 400 mA
Min Typ Max
- - 20
[1] - - 4
- - 15
[2] -
50 70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
A
m

1 page




PBSS4420D pdf
Philips Semiconductors
PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
006aaa272
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB; mounting pad for collector 1 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14028
Product data sheet
Rev. 01 — 21 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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PBSS4420D arduino
Philips Semiconductors
8. Test information
IB
90 %
10 %
IC
90 %
PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
IBon (100 %)
input pulse
(idealized waveform)
IBoff
output pulse
(idealized waveform)
IC (100 %)
10 %
td tr
ton
Fig 13. BISS transistor switching time definition
ts
toff
t
tf
006aaa003
VBB
VCC
(probe)
oscilloscope
450
VI
RB
R2
R1
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = 0.15 A
Fig 14. Test circuit for switching times
RC
Vo (probe)
oscilloscope
450
DUT
mlb826
9397 750 14028
Product data sheet
Rev. 01 — 21 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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