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Número de pieza | PBSS4160T | |
Descripción | NPN low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBSS4160T
60 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
Supersedes data of 2003 Jun 24
2004 May 12
1 page Philips Semiconductors
60 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
PBSS4160T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICES
IEBO
hFE
VCEsat
VBEsat
RCEsat
VBEon
fT
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A; Tj = 150 °C
VCE = 60 V; VBE = 0 A
VEB = 5 V; IC = 0 A
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA; note 1
VCE = 5 V; IC = 1 A; note 1
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA; note 1
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 100 mA; note 1
VCE = 5 V; IC = 1 A
IC = 50 mA; VCE = 10 V;
f = 100 MHz
−
−
−
−
250
200
100
−
−
−
−
−
−
150
Cc collector capacitance
VCB = 10 V; IE = Ie = 0 A; f = 1 MHz −
TYP.
−
−
−
−
400
350
150
90
110
200
0.95
200
0.82
220
5.5
MAX. UNIT
100 nA
50 µA
100 nA
100 nA
−
−
−
110 mV
140 mV
250 mV
1.1 V
250 mΩ
0.9 V
− MHz
10 pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
800
handbook, halfpage
hFE
600
400
200
(1)
(2)
(3)
MLE130
1.2
handbook, halfpage
VBE
(V)
0.8
0.4
MLE133
(1)
(2)
(3)
010−1
1
10 102 103 104
IC (mA)
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 DC current gain as a function of collector
current; typical values.
010−1
1
10 102 103 104
IC (mA)
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
2004 May 12
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PBSS4160T.PDF ] |
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