PDF PBSS3540E Data sheet ( Hoja de datos )

Número de pieza	PBSS3540E
Descripción	PNP low VCEsat (BISS) transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! www.DataSheet4U.com PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Rev. 01 — 3 May 2005 Product data sheet 1. Product proﬁle 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. 1.2 Features s Low collector-emitter saturation voltage VCEsat s High collector current capability: IC and ICM s High collector current gain (hFE) at high IC s High efﬁciency due to less heat generation s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s DC-to-DC conversion s MOSFET gate driving s Motor control s Charging circuits s Low power switches (e.g. motors, fans) 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions open base IC = −500 mA; IB = −50 mA Min Typ Max Unit - - −40 V - - −500 mA - - −1 A [1] - 440 700 mΩ 1 page Philips Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter Conditions ICBO IEBO collector-base cut-off current emitter-base cut-off current VCB = −40 V; IE = 0 A VCB = −40 V; IE = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A hFE VCEsat RCEsat DC current gain collector-emitter saturation voltage collector-emitter saturation resistance VCE = −2 V; IC = −10 mA VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA IC = −200 mA; IB = −10 mA IC = −500 mA; IB = −50 mA IC = −500 mA; IB = −50 mA VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA VBEon base-emitter turn-on VCE = −2 V; IC = −100 mA voltage fT transition frequency VCE = −5 V; IC = −100 mA; f = 100 MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Min Typ Max Unit - - −100 nA - - −50 µA - - −100 nA 200 - - [1] 150 - - [1] 40 - - - - −50 mV - - −130 mV - - −200 mV [1] - - −350 mV [1] - 440 700 mΩ [1] - - −1.2 V - - −1.1 V 100 300 - MHz - - 10 pF 9397 750 15062 Product data sheet Rev. 01 — 3 May 2005 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 5 of 11 5 Page Philips Semiconductors 17. Contents 1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 13 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 16 Contact information . . . . . . . . . . . . . . . . . . . . 10 PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 May 2005 Document number: 9397 750 15062 Published in The Netherlands 11 Page

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