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Número de pieza | PBSS3515E | |
Descripción | PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
Rev. 01 — 18 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
NPN complement: PBSS2515E.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
s Portable applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −500 mA;
IB = −50 mA
Min Typ Max
- - −15
- - −0.5
- - −1
[1] -
300 500
Unit
V
A
A
mΩ
1 page Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
600
hFE
400
200
(1)
(2)
(3)
006aaa372
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1
VCEsat
(mV)
−10−1
006aaa374
(1)
(2)
(3)
−10−2
−1100
VBE
(mV)
−900
−700
−500
−300
(1)
(2)
(3)
006aaa373
−100
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Base-emitter voltage as a function of collector
current; typical values
−1
VCEsat
(mV)
−10−1
−10−2
(1)
(2)
(3)
006aaa375
−10−3
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
−10−3
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14878
Product data sheet
Rev. 01 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 11
5 Page Philips Semiconductors
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Contact information . . . . . . . . . . . . . . . . . . . . 10
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 18 April 2005
Document number: 9397 750 14878
Published in The Netherlands
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet PBSS3515E.PDF ] |
Número de pieza | Descripción | Fabricantes |
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