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Número de pieza | BGF1901-10 | |
Descripción | GSM1900 EDGE power module | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D737
BGF1901-10
GSM1900 EDGE power module
Product specification
Supersedes data of 2003 Nov 17
2004 Oct 11
1 page Philips Semiconductors
GSM1900 EDGE power module
Product specification
BGF1901-10
handboo2k6, .h6alfpage
Gp
(dB)
26.2
25.8
25.4
25
24.6
0
5
MLE253
50
η
(%)
η 40
30
Gp
20
10
0
10 15
PL (W)
f = 1960 MHz.
Fig.6 CW gain power and efficiency as functions
of load power; typical values.
26.4
handbook, halfpage
Gp
(dB)
26
25.6
MLE254
35
η
η (%)
25
Gp
15
25.2
5
02 468
PL (AV) (W)
f1 = 1960 MHz; f2 = 1960.2 MHz.
Fig.7 Two tone gain power and efficiency as
functions of load power; typical values.
handbodoik−m,2h0alfpage
(dBc)
−30
−40
MLE255
d3
d5
−50
d7
−60
−70
0 2468
PL (AV) (W)
f1 = 1960 MHz; f2 = 1960.2 MHz.
Fig.8 Two tone intermodulation distortion as a
function of average load power; typical
values.
2004 Oct 11
28
handbook, halfpage
s21
(dB)
24
20
MLE256
0
s21 s11
(dB)
−10
s11 s11
−20
16 −30
1.81 1.87
1.93 1.99 2.05
2.11
f (GHz)
Fig.9 s-parameters as a function of frequency.
5
5 Page Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R02/02/pp11
Date of release: 2004 Oct 11
Document order number: 9397 750 14002
11 Page |
Páginas | Total 11 Páginas | |
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