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PDF DS1035 Data sheet ( Hoja de datos )

Número de pieza DS1035
Descripción 3-in-1 High Speed Silicon Delay Line
Fabricantes Dallas Semiconducotr 
Logotipo Dallas Semiconducotr Logotipo



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No Preview Available ! DS1035 Hoja de datos, Descripción, Manual

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DS1035
3-in-1 High–Speed Silicon Delay Line
FEATURES
All-silicon timing circuit
Three independent buffered delays
Stable and precise over temperature and
voltage
Leading and trailing edge precision preserves
the input symmetry
Standard 8-pin DIP and 8-pin SOIC (150 mil)
Vapor phasing, IR and wave solderable
Available in Tape and Reel
PIN ASSIGNMENT
IN1
IN2
IN3
GND
1
2
3
4
8 VCC
7 OUT1
6 OUT2
5 OUT3
DS1035M 8-Pin DIP
See Mech. Drawings Section
IN1
IN2
IN3
GND
1
2
3
4
8 VCC
7 OUT1
6 OUT2
5 OUT3
DS1035Z 8-Pin SOIC (150-mil)
See Mech. Drawings Section
PIN DESCRIPTION
IN1-IN3
- Input Signals
OUT1-OUT3
- Output Signals
NC - No Connection
VCC - +5 Volt Supply
GND
- Ground
(Sub)
- Internal substrate
connection, do not make
any external connections
to these pins
DESCRIPTION
The DS1035 series is a low-power +5-volt high-speed version of the popular DS1013 and complements
the DS1033 +3.3 Volt version.
The DS1035 series of delay lines have three independent logic buffered delays in a single package. The
device is Dallas Semiconductor’s fastest 3-in-1 delay line. It is available in a standard 8-pin DIP and 150
Mil 8-pin Mini-SOIC.
The device features precise leading and trailing edge accuracies. It has the inherent reliability of an all-
silicon delay line solution. The DS1035’s initial tolerance is ±1.5 or ±2.0 ns with an additional tolerance
over temperature and voltage of ±1.0 ns or ±1.5 ns, depending on the delay value. Each output is capable
of driving up to 10 LS loads.
Standard delay values are indicated in Table 1. Customers may contact Dallas Semiconductor at (982)
371-4348 for further information.
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DS1035 pdf
TEST CONDITIONS
Ambient Temperature:
25°C ±=3°C
Supply Voltage (VCC):
Input Pulse:
5.0V ±=0.1V
High: 3.0V ±=0.1V
Low: 0.0V ±=0.1V
Source Impedance: 50=max.
Rise and Fall Time: 3.0 ns max. - Measured between 0.6V and 2.4V.
Pulse Width: 500 ns
Pulse Period: 1 µs
Output Load Capacitance: 15 pF
Output:
Each output is loaded with the equivalent of one 74F04 input gate.
Data is measured at the 1.5V level on the rising and falling edges.
DS1035
Note: The above conditions are for test only and do not restrict the devices under other data sheet
conditions.
TIMING DIAGRAM
NOTES:
1. All voltages are referenced to ground.
2. @ VCC=5 volts and 25°C, delay accuracy on both the rising and falling edges within tolerances given
in Table 1.
3. Pulse width and duty cycle specifications may be exceeded; however, accuracy will be application
sensitive with respect to decoupling, layout, etc.
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