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PDF NCP5603 Data sheet ( Hoja de datos )
| Número de pieza | NCP5603 | |
| Descripción | High Efficiency Charge Pump Converter | |
| Fabricantes | ON Semiconductor | |
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NCP5603
High Efficiency Charge Pump
Converter
The NCP5603 is an integrated circuit dedicated to the medium
power White LED applications. The power conversion is achieved by
means of a charge pump structure, using two external ceramic
capacitors, making the system extremely tiny. The device supplies a
constant voltage to the load from a low battery voltage source. It is
particularly suited for the High Efficiency LED used in low cost, low
power applications, with high extended battery life.
Features
• Wide Battery Supply Voltage Range: 2.7 < VCC < 5.5 V
• Automatic Operating Mode 1X, 1.5X and 2X Improves Efficiency
• Dimmable Output Current
• Up to 350 mA Output Pulsed Current
• Selectable Output Voltage
• High Efficiency Up To 90%
• Supports 2.5 kV ESD, Human Body Model
• Supports 200 V Machine Model ESD
• Low 40 mA Short Circuit Current
• Pb−Free Package is Available
Applications
• High Power LED
• Back Light Display
• High Power Flash
http://onsemi.com
MARKING
DIAGRAM
DFN10
MN SUFFIX
CASE 485C
5603
ALYW
G
5603
A
L
Y
W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
PIN CONNECTIONS
Vout 1
C1P 2
Vbat 3
Fsel 4
Vsel 5
(Top View)
10 C2P
9 C1N
8 GND
7 C2N
6 EN
ORDERING INFORMATION
Device
Package
Shipping†
NCP5603MNR2 QFN10, 3x3 3000/ Tape & Reel
NCP5603MNR2G QFN10, 3x3 3000/ Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 1
1
Publication Order Number:
NCP5603/D
1 page  
NCP5603
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
Power Supply Current
Digital Input Pins
Digital Input Pins
Vbat
7.0 V
Ibat 800 mA
Vin
−0.5 V < Vbat < Vbat +0.5 V < 6.0 V
V
Iin
"5.0
mA
Output Voltage
ESD Capability (Note 3)
Human Body Model
Machine Model
Vout
VESD
5.5 V
2.5 kV
200 V
QFN10, 3x3 Package
Power Dissipation @ Tamb = +85°C
Thermal Resistance, Junction−to−Air (RqJA)
Operating Ambient Temperature Range
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Latchup Current Maximum Rating
PDS
RqJA
TA
TJ
TJmax
Tstg
580
68.5
−40 to +85
−40 to +125
+150
−65 to +150
100 mA per JEDEC standard, JESD78
mW
°C/W
°C
°C
°C
°C
Moisture Sensitivity Level (MSL)
1 per IPC/JEDEC standard, J−STD−020A
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) "2.5 kV per JEDEC Standard: JESD22−A114
Machine Model (MM) "200 V per JEDEC Standard: JESD22−A115.
4. The maximum package power dissipation limit must not be exceeded.
http://onsemi.com
5
5 Page 
NCP5603
Figure 13. Evaluation Board: Silk View (Top View)
http://onsemi.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet NCP5603.PDF ] | |
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