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PDF NCP5210 Data sheet ( Hoja de datos )
| Número de pieza | NCP5210 | |
| Descripción | PWM Dual Buck and Linear DDR Power Controller | |
| Fabricantes | ON Semiconductor | |
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NCP5210
3−in−1 PWM Dual Buck
and Linear DDR Power
Controller
The NCP5210, 3−in−1 PWM Dual Buck and Linear DDR Power
Controller, is a complete power solution for MCH and DDR memory.
This IC combines the efficiency of PWM controllers for the VDDQ
supply and the MCH core supply voltage with the simplicity of linear
regulator for the VTT termination voltage.
This IC contains two synchronous PWM buck controller for driving
four external N−Ch FETs to form the DDR memory supply voltage
(VDDQ) and the MCH regulator. The DDR memory termination
regulator (VTT) is designed to track at the half of the reference voltage
with sourcing and sinking current.
Protective features include, soft−start circuitry, undervoltage
monitoring of 5VDUAL and BOOT voltage, and thermal shutdown.
The device is housed in a thermal enhanced space−saving
QFN−20 package.
Features
• Incorporates Synchronous PWM Buck Controllers for VDDQ and
VMCH
• Integrated Power FETs with VTT Regulator Source/Sink up to 2.0 A
• All External Power MOSFETs are N−Channel
• Adjustable VDDQ and VMCH by External Dividers
• VTT Tracks at Half the Reference Voltage
• Fixed Switching Frequency of 250 kHz for VDDQ and VMCH
• Doubled Switching Frequency of 500 kHz for VDDQ Controller in
Standby Mode to Optimize Inductor Current Ripple and Efficiency
• Soft−Start Protection for all Controllers
• Undervoltage Monitor of Supply Voltages
• Overcurrent Protections for DDQ and VTT Regulators
• Fully Complies with ACPI Power Sequencing Specifications
• Short Circuit Protection Prevents Damage to Power Supply Due
to Reverse DIMM Insertion
• Thermal Shutdown
• 5x6 QFN−20 Package
• Pb−Free Package is Available*
Applications
• DDR I and DDR II Memory and MCH Power Supply
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAM
20 1
NCP5210
1 QFN−20 AWLYYWW
MN SUFFIX
CASE 505AB
NCP5210 = Specific Device Code
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
PIN CONNECTIONS
COMP
FBDDQ
SS
PGND
VTT
VDDQ
AGND
FBVTT
DDQ_REF
FB1P5
SW_DDQ
BG_DDQ
TG_DDQ
BOOT
5VDUAL
COMP_1P5
BUF_Cut
TG_1P5
BG_1P5
GND_1P5
NOTE: Pin 21 is the thermal pad
on the bottom of the device.
ORDERING INFORMATION
Device
Package
Shipping†
NCP5210MNR2 QFN−20 2500 Tape & Reel
NCP5210MNR2G QFN−20 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4
1
Publication Order Number:
NCP5210/D
1 page  
NCP5210
ELECTRICAL CHARACTERISTICS (5VDUAL = 5 V, BOOT = 12 V, 5VATX = 5 V, DDQ_REF = 2.5 V, TA = 0°C to 70°C, L = 1.7 mH,
COUT1 = 3770 mF, COUT2 = 470 mF, COUT3 = NA, CSS = 33 nF, R1 = 2.166 kW, R2 = 2 kW, RZ1 = 20 kW, RZ2 = 8 W, CP1 = 10 nF,
CZ1 = 6.8 nF, CZ2 = 100 nF, RM1 = 2.166 kW, RM2 = 2 kW, RZM1 = 20 kW, RZM2 = 8 W, CPM1 = 10 nF, CZM1 = 6.8 nF, CZM2 = 100 nF
for min/max values unless otherwise noted.) duplicate component values of MCH regulator from DDQ.
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
SUPPLY VOLTAGE
5VDUAL Operating Voltage
V5VDUAL
4.5 5.0 5.5 V
BOOT Operating Voltage
VBOOT
12.0 13.2 V
SUPPLY CURRENT
S0 Mode Supply Current from 5VDUAL
I5VDL_S0
BUF_Cut = LOW, BOOT = 12 V,
TG_1P5 and BG_1P5 Open
10 mA
S3 Mode Supply Current from 5VDUAL
I5VDL_S3
BUF_Cut = HIGH, TG_1P5 and
BG_1P5 Open
5.0 mA
S5 Mode Supply Current from 5VDUAL
I5VDL_S5
BUF_Cut = LOW, TG_1P5 and
BG_1P5 Open
1.0 mA
S0 Mode Supply Current from BOOT
IBOOT_S0
BUF_Cut = LOW, BOOT = 12 V,
TG_1P5 and BG_1P5 Open
20 mA
S3 Mode Supply Current from BOOT
IBOOT_S3
BUF_Cut = HIGH, TG_1P5 and
BG_1P5 Open
20 mA
UNDER−VOLTAGE−MONITOR
5VDUAL UVLO Upper Threshold
V5VDLUV+
4.4 V
5VDUAL UVLO Hysteresis
V5VDLhys
250 400 550 mV
BOOT UVLO Upper Threshold
VBOOTUV+
10.4 V
BOOT UVLO Hysteresis
VBOOThys
1.0 V
THERMAL SHUTDOWN
Thermal Shutdown
Thermal Shutdown Hysteresis
DDQ SWITCHING REGULATOR
FBDDQ Feedback Voltage,
Control Loop in Regulation
Feedback Input Current
Tsd
Tsdhys
VFBQ
IDDQFB
(Note 3)
(Note 3)
TA = 25°C
TA = 0°C to 70°C
V(FBDDQ) = 1.3 V
145 °C
25 °C
1.178 1.190 1.202
1.166
1.214
1.0
V
mA
Oscillator Frequency in S0 Mode
FDDQS0
217 250 283 KHz
Oscillator Frequency in S3 Mode
FDDQS3
434 500 566 KHz
Oscillator Ramp Amplitude
dVOSC
(Note 3)
1.3 Vp−p
Current Limit Blanking Time in S0 Mode
TDDQbk
(Note 3)
400
nS
Current Limit Threshold Offset from 5VDUAL
VOCP
(Note 3)
0.8
V
Minimum Duty Cycle
Dmin
0%
Maximum Duty Cycle
Dmax
100 %
Soft−Start Pin Current for DDQ
Iss1 V(SS) = 0 V
4.0 mA
DDQ ERROR AMPLIFIER
DC Gain
GAINDDQ
(Note 3)
70 dB
Gain−Bandwidth Product
GBWDDQ
COMP PIN to GND = 220 nF,
1.0 W in Series (Note 3)
12 MHz
Slew Rate
SRDDQ
COMP PIN TO GND = 10 pF
8.0 V/mS
3. Guaranteed by design, not tested in production.
http://onsemi.com
5
5 Page 
NCP5210
For enhanced efficiency, an active synchronous switch is
used to eliminate the conduction loss contributed by the
forward voltage of a diode or Schottky diode rectifier.
Adaptive non−overlap timing control of the complementary
gate drive output signals is provided to reduce
shoot−through current that degrades efficiency.
Tolerance of VDDQ
Both the tolerance of VFBQ and the ratio of the external
resistor divider R1/R2 impact the precision of VDDQ. With
the control loop in regulation, VDDQ = VFBQ × (1 +
R1/R2). With a worst case (for all valid operating
conditions) VFBQ tolerance of ±1.5%, a worst case range of
±2% for VDDQ will be assured if the ratio R1/R2 is
specified as 1.100 ±1%.
Fault Protection of VDDQ Regulator
In S0 mode, an internal voltage (VOCP) = 5VDUAL – 0.8
sets the current limit for the high−side switch. The voltage
VOCP pin is compared to the voltage at SWDDQ pin when
the high−side gate drive is turned on after a fixed period of
blanking time to avoid false current limit triggering. When
the voltage at SWDDQ is lower than VOCP, an overcurrent
condition occurs and all regulators are latched off to protect
against overcurrent. The IC can be powered up again if one
of the supply voltages, 5VDUAL or 12VATX, is recycled.
The main purpose is for fault protection but not to be for an
precise current limit.
In S3 mode, this overcurrent protection feature is
disabled.
Feedback Compensation of VDDQ Regulator
The compensation network is shown in Figure 2.
VTT Active Terminator
The VTT active terminator is a 2 quadrant linear regulator
with two internal N−Ch FETs to provide current sink and
source capability up to 2.0 A. It is activated only when the
DDQ regulator is in regulation in S0 mode. It draws power
from VDDQ with the internal gate drive power derived from
5VDUAL. While VTT output is connecting to the FBVTT
pin directly, VTT voltage is designed to automatically track
at the half of DDQ_REF. This regulator is stable with any
value of output capacitor greater than 470 mF, and is
insensitive to ESR ranging from 1−mW to 400 mW.
Fault Protection of VTT Active Terminator
To provide protection for the internal FETs, bi−directional
current limit preset at 2.4 A magnitude is implemented. The
VTT current limit provides a soft−start function during
startup.
MCH Switching Regulator
The secondary switching regulator is identical to the DDQ
regulator except the output is 10 A, no fault protection is
implemented and the soft−start timing is twice as fast with
respect to CSS.
BOOT Pin Supply Voltage
In typical application, a flying capacitor is connected
between SWDDQ and BOOT pins. In S0 mode, 12VATX is
tied to BOOT pin through a Schottky diode as well. A 13−V
Zener clamp circuit must clamp this boot strapping voltage
produced by the flying capacitor in S0 mode.
In S3 mode the 12VATX is collapsed and the BOOT
voltage is created by the Schottky diode between 5VDUAL
and BOOT pins as well as the flying capacitor. The
BOOT_UVLO works specially. The _BOOTGD goes low
and the IC remains in S3 mode.
Thermal Consideration
Assuming an ambient temperature of 50°C, the maximum
allowed dissipated power of QFN−20 is 2.8 W, which is
enough to handle the internal power dissipation in S0 mode.
To take full advantage of the thermal capability of this
package, the exposed pad underneath must be soldered
directly onto a PCB metal substrate to allow good
thermal contact.
Thermal Shutdown
When the chip junction temperature exceeds 145°C, the
entire IC is shutdown, until the junction temperature drops
below 120°C. Below which, the chip resumes normal
operation.
http://onsemi.com
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet NCP5210.PDF ] | |
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