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PDF LH28F640SPHT-PTL12 Data sheet ( Hoja de datos )
| Número de pieza | LH28F640SPHT-PTL12 | |
| Descripción | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory | |
| Fabricantes | Sharp Electrionic | |
| Logotipo |  |
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LHF64P01
3
A22
CE1
A21
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPEN
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56-LEAD TSOP
STANDARD PINOUT
14mm x 20mm
TOP VIEW
56 NC
55 WE#
54 OE#
53 STS
52 DQ15
51 DQ7
50 DQ14
49 DQ6
48 GND
47 DQ13
46 DQ5
45 DQ12
44 DQ4
43 VCCQ
42 GND
41 DQ11
40 DQ3
39 DQ10
38 DQ2
37 VCC
36 DQ9
35 DQ1
34 DQ8
33 DQ0
32 A0
31 BYTE#
30 NC
29 CE2
Figure 1. 56-Lead TSOP (Normal Bend) Pinout
Rev. 0.06
5 Page 
LHF64P01
9
Table 4. Bus Operation(1, 2)
Mode
Read Array
Output Disable
Standby
Reset
Read Identifier
Codes/OTP
Notes
8
5
RP#
VIH
VIH
VIH
VIL
8 VIH
CE0,1,2 (3)
Enabled
Enabled
Disabled
X
Enabled
OE#
VIL
VIH
X
X
VIL
WE#
VIH
VIH
X
X
VIH
Address
X
X
X
X
Refer to
Table 3
VPEN
X
X
X
X
X
DQ (4)
DOUT
High Z
High Z
High Z
Refer to
Table 3
STS (10)
X
X
X
High Z
X
Read Query
8,9 VIH Enabled VIL
VIH
See
Appendix
X
See
Appendix
X
Write
6,7,8 VIH Enabled VIH
VIL
X
X DIN
X
NOTES:
1. Refer to DC Characteristics. When VPEN≤VPENLK, memory contents can be read, but cannot be altered.
2. X can be VIL or VIH for control pins and addresses, and VPENLK or VPENH for VPEN.
Refer to DC Characteristics for VPENLK and VPENH voltages.
3. Refer to Table 2 to determine whether the device is selected or de-selected depending on the state of CE0, CE1 and CE2.
4. DQ refers to DQ15-DQ0 in word mode (BYTE#=VIH : ×16 bit) and DQ7-DQ0 in byte mode (BYTE#=VIL : ×8 bit).
5. RP# at GND±0.2V ensures the lowest power consumption.
6. Command writes involving block erase, (page buffer) program, block lock configuration or OTP program are reliably
executed when VPEN=VPENH and VCC=2.7V-3.6V.
7. Refer to Table 5 for valid DIN during a write operation.
8. Never hold OE# low and WE# low at the same timing.
9. Refer to Appendix of LH28F640SP series for more information about query code.
10. STS is VOL when the WSM (Write State Machine) is executing internal block erase, (page buffer) program or OTP
program algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with program and page
buffer program inactive), (page buffer) program suspend mode, or reset mode.
Rev. 0.06
11 Page | ||
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