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PDF PBSS4220V Data sheet ( Hoja de datos )
| Número de pieza | PBSS4220V | |
| Descripción | 2A NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4220V
20 V, 2 A NPN low VCEsat (BISS) transistor
Rev. 01 — 6 February 2006
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
PNP complement: PBSS5220V.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
s Portable applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
tp ≤ 300 µs
IC = 1 A;
IB = 100 mA
Min Typ Max
- - 20
--2
--4
[1] -
140 175
Unit
V
A
A
mΩ
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Philips Semiconductors
PBSS4220V
20 V, 2 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off
current
collector-emitter cut-off
current
VCB = 20 V; IE = 0 A
VCB = 20 V; IE = 0 A;
Tj = 150 °C
VCE = 20 V; VBE = 0 V
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE DC current gain
VCEsat collector-emitter
saturation voltage
RCEsat collector-emitter
saturation resistance
VCE = 2 V; IC = 1 mA
VCE = 2 V; IC = 100 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 2 A; IB = 100 mA
IC = 2 A; IB = 200 mA
IC = 1 A; IB = 100 mA
VBEsat
VBEon
base-emitter saturation
voltage
base-emitter turn-on
voltage
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 100 mA
VCE = 5 V; IC = 1 A
td delay time
tr rise time
IC = 1 A; IBon = 50 mA;
IBoff = −50 mA
ton turn-on time
ts storage time
tf fall time
toff turn-off time
fT
transition frequency
VCE = 10 V; IC = 50 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
- - 0.1 µA
- - 50 µA
- - 0.1 µA
- - 0.1 µA
220 480 -
220 440 -
[1] 220 410 -
[1] 200 360 -
[1] 120 220 -
- 35 55 mV
[1] -
70 95 mV
[1] - 145 180 mV
[1] - 140 175 mV
[1] - 275 355 mV
[1] - 270 350 mV
[1] - 140 175 mΩ
[1] - 0.95 1.1 V
[1] -
1 1.2 V
- 0.8 1.1 V
- 9 - ns
- 29 - ns
- 38 - ns
- 200 - ns
- 40 - ns
- 240 - ns
- 210 - MHz
- 11 - pF
PBSS4220V_1
Product data sheet
Rev. 01 — 6 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Philips Semiconductors
PBSS4220V
20 V, 2 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9: Revision history
Document ID
Release date Data sheet status
PBSS4220V_1
20060206
Product data sheet
Change notice Doc. number
--
Supersedes
-
PBSS4220V_1
Product data sheet
Rev. 01 — 6 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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