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PDF DIM600XSM45-F000 Data sheet ( Hoja de datos )
| Número de pieza | DIM600XSM45-F000 | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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Preliminary
Data
DIM600XSM45-F000
Single Switch IGBT Module
DS5874-1.0 October 2005 (LN24333)
FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silicon
• Lead Free construction
• Isolated MMC Base with AlN Substrates
• High Thermal Cycling Capability
KEY PARAMETERS
V CES
4500V
V CE(sat) *
(typ) 3.0 V
I C (max) 600A
I C(PK)
(max) 1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
• High Reliability Inverters
• Motor Controllers
• Traction Drives
• Choppers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and
currents up to 3600A.
The DIM600XSM45-F000 is a single switch 4500V, soft
punch through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks
for safety.
ORDERING INFORMATION
Order As:
DIM600XSM45-F000
Note: When ordering, please use the complete part number
Fig. 1 Single switch circuit diagram
Outline type code: X
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Page 1 of 7Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF
Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550
www.dynexsemi.com
Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF
1 page  
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DIM600XSM45-F000
1400
1200
1000
Tvj=125°C
Tvj=25°C
800
600
400
Conditions:
Rgoff=4.7Ω
Cge=110nF
200 Vge=±15V
Vcc=3000V
Ls<120nH
0
2000
2500
3000
3500
4000
4500
Collector emitter voltage, Vce - (V)
Reverse bias safe operating area
5000
900
T j= 1 2 5 °C
800
700
600
500
400
300
200
100
0
0 500 1000 1500 2000 2500 3000 3500 4000
Reverse voltage, Vr - (V)
Diode reverse bias safe operating area
100
Rth IGBT
Rth diode
10
1
0.001
0.01 0.1
Pulse time, tp - (s)
1
10
IG B T
D io d e
R i ( °C /k W )
ti (m s )
R i ( °C /k W )
ti (m s )
1
0 .4 6
0 .1 7
0 .9 0
0 .1 7
2
2 .1 0
8 .0 8
4 .2 2
8 .0 8
3
3 .64
51 .9 2
7 .28
51 .9 2
4
5 .8 6
2 8 0 .5
11.7 1
2 8 0 .5
Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DIM600XSM45-F000.PDF ] | |
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