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Número de pieza | EMD5DXV6T1 | |
Descripción | (EMD5DXV6T1 / EMD5DXV6T5) Dual Bias Resistor Transistors | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD5DXV6T1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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EMD5DXV6T1,
EMD5DXV6T5
Preferred Devices
Product Preview
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD5DXV6T1 series,
two complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• Lead Free Solder Plating
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
654
12 3
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
U5 D
U5 = Specific Device Code
D = Date Code
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
Device
Package
Shipping
EMD5DXV6T1
SOT−563
4 mm pitch
4000/Tape & Reel
EMD5DXV6T5
SOT−563
2 mm pitch
8000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
July, 2003 − Rev. P1
1
Publication Order Number:
EMD5DXV6/D
1 page EMD5DXV6T1, EMD5DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6T1 PNP TRANSISTOR
1
IC/IB = 10
0.1
TA = 75°C
−25°C
25°C
1000
VCE = 10 V
100
TA = 75°C
−25°C
25°C
10
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
50
60
1
1
10 100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
1000
12
f = 1 MHz
10 IE = 0 mA
TA = 25°C
8
6
4
SERIES 1
2
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
75°C
10
1
0.1
TA = −25°C
VO = 5 V
0.01
0
25°C
2468
Vin, INPUT VOLTAGE (VOLTS)
10
12
Figure 5. Output Current versus Input Voltage
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet EMD5DXV6T1.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD5DXV6T1 | (EMD5DXV6T1 / EMD5DXV6T5) Dual Bias Resistor Transistors | ON Semiconductor |
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