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Número de pieza | DF3A6.8LFE | |
Descripción | Diodes | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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DF3A6.8LFE
TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type
DF3A6.8LFE
Diodes for Protecting Against ESD
Unit: mm
· Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
· Zener voltage correspond to E24 Series.
· Low total capacitance: CT = 6.0 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
Tj
Tstg
Rating
100
125
-55 to 125
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
1-2SA1A
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
VZ
ZZ
ZZK
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
6.5 6.8 7.1
V
¾ ¾ 50 W
¾ ¾ 100 W
¾ ¾ 0.5 mA
¾ 6.0 ¾ pF
Guaranteed Level of ESD Immunity
Marking
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
±8 kV
CU
Equivalent Circuit
(top view)
Q1 Q2
1 2002-01-16
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet DF3A6.8LFE.PDF ] |
Número de pieza | Descripción | Fabricantes |
DF3A6.8LFE | Diodes | Toshiba Semiconductor |
DF3A6.8LFU | Diodes | Toshiba Semiconductor |
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