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PDF BC847BM3T5G Data sheet ( Hoja de datos )
| Número de pieza | BC847BM3T5G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | ON Semiconductor | |
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BC847BM3T5G
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−723 package which is
designed for low power surface mount applications.
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 V
50 V
6.0 V
100 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD
260 mW
2.0 mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
480 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD
600 mW
4.8 mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
205 °C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
SOT−723
CASE 631AA
2 STYLE 1
1
MARKING
DIAGRAM
1F M
1F = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BC847BM3T5G SOT−723 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 0
1
Publication Order Number:
BC847BM3/D
1 page  
BC847BM3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−X−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
D
b1
3
−Y−
A
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
12
E
L HE
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.45 0.50 0.55 0.018 0.020 0.022
b 2X
e 0.08 (0.0032) X Y
C
b 0.15 0.21 0.27 0.0059 0.0083 0.0106
b1 0.25 0.31 0.37 0.010 0.012 0.015
C 0.07 0.12 0.17 0.0028 0.0047 0.0067
D 1.15 1.20 1.25 0.045 0.047 0.049
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
E 0.75 0.80 0.85 0.03 0.032 0.034
e 0.40 BSC
0.016 BSC
H E 1.15 1.20 1.25 0.045 0.047 0.049
L 0.15 0.20 0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
SCALE 20:1
ǒ mm Ǔ
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BC847BM3T5G.PDF ] | |
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