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Número de pieza | BAV70DXV6T1 | |
Descripción | (BAV70DXV6T1 / BAV70DXV6T5) Monolithic Dual Switching Diode Common Cathode | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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BAV70DXV6T1,
BAV70DXV6T5
Preferred Device
Monolithic Dual Switching
Diode Common Cathode
Features
• These are Pb−Free Devices
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
VR
IF
IFM(surge)
Symbol
PD
Thermal Resistance, Junction-to-Ambient RqJA
Characteristic
(Both Junctions Heated)
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction-to-Ambient RqJA
Value
70
200
500
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
http://onsemi.com
6
CATHODE
5
ANODE
4
ANODE
ANODE
1
2
ANODE
3
CATHODE
BAV70DXV6T1
SOT−563
CASE 463A
1 PLASTIC
MARKING DIAGRAM
A4 M G
1G
A4 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BAV70DXV6T1
Package
Shipping†
SOT−563* 4000/Tape & Reel
BAV70DXV6T1G SOT−563* 4000/Tape & Reel
BAV70DXV6T5 SOT−563* 8000/Tape & Reel
BAV70DXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
BAV70DXV6T1/D
1 page 100
10
1.0
0.1
0.2
BAV70DXV6T1, BAV70DXV6T5
Curves Applicable to Each Anode
TA = 85°C
10
TA = 150°C
1.0 TA = 125°C
TA = −40°C
TA = 25°C
0.1
0.01
TA = 85°C
TA = 55°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.001
1.2 0
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
1.0
0.9
0.8
0.7
0.6
02
46
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8
50
http://onsemi.com
3
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BAV70DXV6T1.PDF ] |
Número de pieza | Descripción | Fabricantes |
BAV70DXV6T1 | (BAV70DXV6T1 / BAV70DXV6T5) Monolithic Dual Switching Diode Common Cathode | ON Semiconductor |
BAV70DXV6T5 | (BAV70DXV6T1 / BAV70DXV6T5) Monolithic Dual Switching Diode Common Cathode | ON Semiconductor |
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