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PDF BAS16DXV6T5 Data sheet ( Hoja de datos )
| Número de pieza | BAS16DXV6T5 | |
| Descripción | (BAS16DXV6T1 / BAS16DXV6T5) Dual Switching Diode | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BAS16DXV6T1,
BAS16DXV6T5
Preferred Device
Dual Switching Diode
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
VR
IF
IFM(surge)
75
200
500
V
mA
mA
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient RqJA
350 °C/W
(Note 1)
Characteristic
(Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient RqJA
250 °C/W
(Note 1)
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
http://onsemi.com
61
43
654
12 3
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
A6 MG
G
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BAS16DXV6T1
SOT−563
4 mm pitch
4000/Tape & Reel
BAS16DXV6T1G SOT−563
4 mm pitch
(Pb−Free) 4000/Tape & Reel
BAS16DXV6T5
SOT−563
2 mm pitch
8000/Tape & Reel
BAS16DXV6T5G SOT−563
2 mm pitch
(Pb−Free) 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
1
Publication Order Number:
BAS16DXV6/D
1 page  
BAS16DXV6T1, BAS16DXV6T5
PACKAGE DIMENSIONS
D
−X−
654
12 3
e
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
E
−Y−
b 65 PL
0.08 (0.003) M X Y
HE
C
SOLDERING FOOTPRINT*
0.3
0.0118
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.50 0.55 0.60 0.020 0.021 0.023
b 0.17 0.22 0.27 0.007 0.009 0.011
C 0.08 0.12 0.18 0.003 0.005 0.007
D 1.50 1.60 1.70 0.059 0.062 0.066
E 1.10 1.20 1.30 0.043 0.047 0.051
e 0.5 BSC
0.02 BSC
L 0.10 0.20 0.30 0.004 0.008 0.012
HE 1.50 1.60 1.70 0.059 0.062 0.066
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
1.35
0.0531
1.0
0.0394
0.45
0.0177
0.5 0.5
0.0197 0.0197
ǒ ǓSCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BAS16DXV6T5.PDF ] | |
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