(PDF) MA26V09 Datasheet - Silicon epitaxial planar type

Número de pieza	MA26V09
Descripción	Silicon epitaxial planar type
Fabricantes	Panasonic Semiconductor
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No Preview Available ! www.DataSheet4U.com Variable Capacitance Diodes MA26V09 Silicon epitaxial planar type For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Junction temperature Storage temperature VR 6 Tj 125 Tstg −55 to +125 Unit V °C °C 32 1.00±0.05 1 Unit: mm 0.39+−00..0031 0.25±0.05 0.25±0.05 1 32 0.65±0.01 0.05±0.03 Marking Symbol: 2S 1: Anode 2: N.C. 3: Cathode ML3-N2 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Reverse current (DC) Diode capacitance Capacitance ratio Series resistance * IR CD(1V) CD(3V) CD(1V)/CD(3V) rD VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz Note) 1. Rated input/output frequency: 470 MHz 2. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Min Typ Max Unit 10 nA 14.9 16.4 pF 8.4 9.2 1.69 1.87  0.35 Ω Publication date: July 2002 SKD00078BED 1 1 page

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PDF MA26V09 Data sheet ( Hoja de datos )