|
|
PDF XN5531 Data sheet ( Hoja de datos )
| Número de pieza | XN5531 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de XN5531 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Composite Transistors
XN05531 (XN5531)
Silicon NPN epitaxial planer transistor
For high frequency oscillation and mixing
I Features
G Two elements incorporated into one package.
G Reduction of the mounting area and assembly cost by one half.
I Basic Part Number of Element
G 2SC3130 × 2 elements
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10°
1
Unit: mm
0.16+–00..0160
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Ratings
15
10
3
50
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini6-G1 Package
Marking Symbol: 5M
Internal Connection
Tr1
6
1
52
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
hFE2/hFE1 ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Collector to base parameter
Common base reverse transfer capacitance
*1 Ratio between 2 elements
VCEO
VEBO
ICBO
ICEO
hFE1
hFE (small/large)*1
hFE2/hFE1
VCE(sat)
Cob
fT
rbb'·CC
Crb
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = 0
VCE = 10V, IB = 0
VCE = 4V, IC = 5mA
VCE = 4V, IC = 5mA
VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 200MHz
VCB = 4V, IE = –5mA, f = 30MHz
VCB = 4V, IE = 0, f = 1MHz
4
min
10
3
75
0.5
0.75
1.4
3
Tr2
typ max Unit
V
V
1 µA
10 µA
200 400
0.99
1.6
0.5 V
0.9 1.1 pF
1.9 2.5 GHz
11.8 13.5
ps
0.25 0.35
pF
Note) The Part number in the Parenthesis shows conventional part number.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet XN5531.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| XN5531 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
| XN5531 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |