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PDF IRGS4065PBF Data sheet ( Hoja de datos )
| Número de pieza | IRGS4065PBF | |
| Descripción | (IRGS4065PBF / IRGB4065PBF) PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 97059B
IRGB4065PbF
IRGS4065PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
C
Key Parameters
VCE min
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C c
TJ max
300
1.75
205
150
CC
V
V
A
°C
G
E
n-channel
GCE
TO-220
IRGB4065DPbF
GCE
D2Pak
IRGS4065DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
dJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
dJunction-to-Ambient, TO-220
dJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
±30
70
40
205
178
71
1.4
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.70
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
09/05/06
1 page  
100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
IRGB/S4065PbF
25
IC = 25A
20
VCE = 240V
15
VCE = 200V
VCE = 150V
10
100
Coes
Cres
10
0
50 100 150 200 250
VCE, Collector-toEmitter-Voltage(V)
300
5
0
0 10 20 30 40 50 60 70 80
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
0.0239
0.1179
τi (sec)
0.000011
0.000047
τ3 τ3
τ4 τ4
0.3264 0.000922
0.2324 0.004889
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRGS4065PBF.PDF ] | |
Hoja de datos destacado
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