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PDF IRG4PC60U Data sheet ( Hoja de datos )

Número de pieza IRG4PC60U
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRG4PC60U Hoja de datos, Descripción, Manual

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PD - 94443
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC60U
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching,
>200 kHz in resonant mode.
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
C
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
VCES = 600V
VCE(on) typ. = 1.6V
@VGE = 15V, IC = 40A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
75
40
300
300
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
----
0.24
----
6 (0.21)
Max.
0.24
----
40
----
Units
°C/W
g (oz)
1
04/26/02

1 page




IRG4PC60U pdf
IRG4PC60U
10000
8000
Cies
V GE
C ies
C res
= 0V,
= C ge
= C gc
f = 1MHz
+ C gc , C ce SHORTED
C oes = C ce + C gc
6000
4000
2000
Coes
Cres
0
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
100
20 VIVcIc=CCc =4C04V8==04V4000AV
16
12
8
4
0
0 100 200 300
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
400
5.00
VCC= 480V
VGE = 15V
TJ = 25°C
4.00 I C = 40A
3.00
2.00
100
RG = 5.0
VGE = 15V
VCC= 480V
10
IC = 80A
IC = 40A
1
IC = 20A
1.00
0
10 20 30 40
RG, Gate Resistance ( )
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5

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