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PDF IRG4PC60F Data sheet ( Hoja de datos )

Número de pieza IRG4PC60F
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
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PD - 94442
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC60F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 60A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed for best performance when used with
IR Hexfred & IR Fred companion diodes.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
90
60
120
120
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.24
–––
40
–––
Units
°C/W
g (oz)
1
04/26/02

1 page




IRG4PC60F pdf
IRG4PC60F
100000
10000
Cies
VGE = 0V, f = 1 MHZ
Cies = Cge + Cgc, Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
1000
Coes
100
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
V CC = 400V
I C = 40A
15
10
5
0
0 50 100 150 200 250 300
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
8.00
7.00
VCC= 480V
VGE = 15V
TJ = 25°C
I C= 60A
100
RG = 5.0
VGE = 15V
VCC= 480V
IC = 120A
6.00
5.00
4.00
0
10 20 30 40
RG, Gate Resistance ()
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
IC = 60A
IC = 30A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5

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