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PDF IRHM58260 Data sheet ( Hoja de datos )

Número de pieza IRHM58260
Descripción (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE
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PD - 91862D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57260
200V, N-CHANNEL
4# TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHM57260 100K Rads (Si)
IRHM53260 300K Rads (Si)
IRHM54260 600K Rads (Si)
IRHM58260 1000K Rads (Si)
RDS(on)
0.049
0.049
0.049
0.050
ID
35A*
35A*
35A*
35A*
TO-254AA
International Rectifier’s R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Neutron Tolerant
Single Event Effects (SEE) with useful performance n Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm2)). The combination n Repetitive Avalanche Ratings
of low RDS(on) and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
converters and motor control. These devices retain n Ease of Paralleling
all of the well established advantages of MOSFETs n Hermatically Sealed
such as voltage control, fast switching, ease of paral- n Electically Isolated
leling and temperature stability of electrical param- n Ceramic Eyelets
eters.
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
32 A
140
250 W
2.0 W/°C
±20 V
500 mJ
35 A
25 mJ
10 V/ns
-55 to 150
oC
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
01/30/03

1 page




IRHM58260 pdf
Pre-Irradiation
IRHM57260
12000
10000
8000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
6000
4000
Coss
2000
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0.2
VGS = 0 V
0.6 1.0 1.4 1.8
VSD,Source-to-Drain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
100
OPERATION IN THIS AREA LIMITED
BY R DS(ON)
10 10us
100us
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5

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