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PDF IRHM57064 Data sheet ( Hoja de datos )

Número de pieza IRHM57064
Descripción (IRHM5x064) RADIATION HARDENED POWER MOSFET
Fabricantes International Rectifier 
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PD - 93792D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57064 100K Rads (Si)
IRHM53064 300K Rads (Si)
IRHM54064 600K Rads (Si)
IRHM58064 1000K Rads (Si)
RDS(on)
0.012
0.012
0.012
0.013
ID
35A*
35A*
35A*
35A*
IRHM57064
60V, N-CHANNEL
5 TECHNOLOGY
™
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
35*
35* A
140
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
1090
35
20.8
4.8
-55 to 150
300 (0.063 in. (1.6 mm from case for10s )
9.3 (Typical )
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
07/19/04

1 page




IRHM57064 pdf
Pre-Irradiation
IRHM57064
10000
8000
6000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
2000
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
VDS = 48V
VDS = 30V
VDS = 12V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
1 TJ = 25° C
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0
VSD ,Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µs
1ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5

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