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PDF ZXMP6A17E6 Data sheet ( Hoja de datos )
| Número de pieza | ZXMP6A17E6 | |
| Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ADVANCE INFORMATION
60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A17E6
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.125 ID = -3.0A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXMP6A17E6TA
ZXMP6A17E6TC
REEL
SIZE
7”
13”
TAPE QUANTITY
WIDTH PER REEL
8mm 3000 units
8mm 10000 units
DEVICE MARKING
• 617
SOT23-6
PINOUT
Top View
PROVISIONAL ISSUE B - MARCH 2005
1
1 page  
ADVANCE INFORMATION
TYPICAL CHARACTERISTICS
ZXMP6A17E6
T = 25°C
10
1
0.1
10V
4.5V
3.5V
3V
2.5V
-V
GS
2V
0.01
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
0.1 -V = 10V
DS
12345
-V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
T = 150°C
10
1
0.1
10V
4.5V
3.5V
3V
2.5V
2V
-V
GS
1.5V
0.01
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
2.0
1.8
V = -10V
GS
I = - 0.9A
1.6 D
1.4
R
DS(on)
1.2
1.0
0.8
0.6
0.4
-50
V
GS(th)
V =V
GS DS
I = -250uA
D
0 50 100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
2V T = 25°C
-V
GS
10 2.5V
3V
3.5V
1
4.5V
10V
0.1 0.1 1 10
-I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1 T = 25°C
0.001.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE B - MARCH 2005
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXMP6A17E6.PDF ] | |
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