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PDF ZXMP6A17DN8 Data sheet ( Hoja de datos )
| Número de pieza | ZXMP6A17DN8 | |
| Descripción | DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXMP6A17DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.1A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMP6A17DN8TA 7’‘ 12mm
ZXMP6A17DN8TC 13’‘ 12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
ZXMP
6A17D
SO8
PINOUT
Top view
PROVISIONAL ISSUE A - SEPTEMBER 2002
1
1 page  
TYPICAL CHARACTERISTICS
ZXMP6A17DN8
T = 25°C
10
1
0.1
10V
4.5V
3.5V
3V
2.5V
-V
GS
2V
0.01
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
0.1 -V = 10V
DS
12345
-V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
T = 150°C
10
1
0.1
10V
4.5V
3.5V
3V
2.5V
2V
-V
GS
1.5V
0.01
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
2.0
1.8
V = -10V
GS
I = - 0.9A
1.6 D
1.4
R
DS(on)
1.2
1.0
0.8
0.6
0.4
-50
V
GS(th)
V =V
GS DS
I = -250uA
D
0 50 100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
2V T = 25°C
-V
GS
10 2.5V
3V
3.5V
1
4.5V
10V
0.1 0.1 1 10
-I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1 T = 25°C
0.001.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - SEPTEMBER 2002
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXMP6A17DN8.PDF ] | |
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