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PDF IRHQ6110 Data sheet ( Hoja de datos )

Número de pieza IRHQ6110
Descripción (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Fabricantes International Rectifier 
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PD - 91781B
IRHQ6110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
POWER MOSFET
RAD-HardHEXFET®
SURFACE MOUNT (LCC-28)
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHQ6110 100K Rads (Si) 0.6
IRHQ63110 300K Rads (Si) 0.6
IRHQ6110 100K Rads (Si) 1.1
IRHQ63110 300K Rads (Si) 1.1
ID
3.0A
3.0A
-2.3A
-2.3A
CHANNEL
N
N
P
P
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
P-Channel Units
3.0 -2.3
1.9 -1.5 A
12 -9.2
12 12 W
0.1 0.1 W/°C
±20
85
±20
75
V
mJ
3.0 -2.3 A
1.2
3.0
1.2
9.0
mJ
V/ns
-55 to 150
oC
300 (for 5s)
0.89 (Typical)
g
For footnotes, refer to the last page
www.irf.com
1
03/24/04

1 page




IRHQ6110 pdf
Pre-Irradiation
IRHQ6110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100KRads(Si)1 300K to 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
-100
- 2.0
-4.0
-100
100
-25
1.056
1.1
-3.0
-100
- 2.0
-5.0
-100
100
- 25
1.056
1.1
-3.0
V
nA
µA
V
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS= -80V, VGS =0V
VGS = -12V, ID = -1.5A
VGS = -12V, ID = -1.5A
VGS = 0V, IS = -2.3A
1. Part numbers IRHQ6110
2. Part number IRHQ63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Cu 28.0
Br 36.8
I 59.8
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V
43.0 -100
39.0 -100
32.6 -60
@VGS=5V
-100
-100
VDS (V)
@VGS=10V
-100
-70
@VGS=15V
-70
- 50
@VGS=20V
-60
-40
-120
-100
-80
-60
-40
-20
0
0
Cu
Br
I
5 10 15 20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
www.irf.com
5

5 Page





IRHQ6110 arduino
Pre-Irradiation
P-Channel
Q2,Q3
500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400 Coss = Cds + Cgd
20 ID = -2.3A
16
300 Ciss
12
IRHQ6110
VDS = 80V
VDS = 50V
VDS = 20V
200
100
0
1
Coss
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 1236
0
0 4 8 12 16
QG, Total Gate Charge (nC)
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150° C
1
TJ = 25°C
0.1
0.5
VGS = 0 V
1.0 1.5 2.0 2.5 3.0
-VSD ,Source-to-Drain Voltage (V)
3.5
Fig 20. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1 10
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 21. Maximum Safe Operating Area
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