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PDF IRHQ57110 Data sheet ( Hoja de datos )
| Número de pieza | IRHQ57110 | |
| Descripción | (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD - 94211A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level RDS(on)
IRHQ57110 100K Rads (Si) 0.27Ω
IRHQ53110 300K Rads (Si) 0.27Ω
IRHQ54110 600K Rads (Si) 0.27Ω
IRHQ58110 1000K Rads (Si) 0.29Ω
ID
4.6A
4.6A
4.6A
4.6A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHQ57110
100V, Quad N-CHANNEL
RAD-Hard™ HEXFET®
4# TECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
4.6
2.9 A
18.4
12 W
0.1 W/°C
±20 V
47 mJ
4.6 A
1.2 mJ
6.1 V/ns
-55 to 150
oC
300 (for 5s)
0.89 (Typical)
g
1
08/01/01
1 page  
Pre-Irradiation
IRHQ57110
800
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600
Ciss
400
Coss
200
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 4.6A
16
12
VDS= 80V
VDS = 50V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25 ° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHQ57110.PDF ] | |
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