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Número de pieza | IRHQ563110 | |
Descripción | (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 94057B
IRHQ567110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
POWER MOSFET
SURFACE MOUNT (LCC-28)
RAD-Hard™ HEXFET®
4# TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHQ567110 100K Rads (Si) 0.27Ω
IRHQ563110 300K Rads (Si) 0.29Ω
IRHQ567110 100K Rads (Si) 0.96Ω
IRHQ563110 300K Rads (Si) 0.98Ω
ID
4.6A
4.6A
-2.8A
-2.8A
CHANNEL
N
N
P
P
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = ±12V, TC = 25°C Continuous Drain Current
ID @ VGS = ±12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
4.6
2.9
P-Channel
-2.8
-1.8
Units
A
18.4
-11.2
12 12 W
0.1
±20
47 ➁
0.1
±20
70 ~
W/°C
V
mJ
4.6 -2.8 A
1.2
6.1 ➂
-55 to 150
1.2
7.1
mJ
V/ns
oC
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
07/25/01
1 page Pre-Irradiation
IRHQ567110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1 300K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-39)
Static Drain-to-Source ➃
On-State Resistance (LCC-28)
Diode Forward Voltage ➃
-100
- 2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.916
0.96
-5.0
-100
- 2.0
—
—
—
—
—
-4.0
-100
100
-10
0.936
— 0.98
— -5.0
V
nA
µA
Ω
Ω
V
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS= -80V, VGS =0V
VGS = -12V, ID = -1.8A
VGS = -12V, ID = -1.8A
VGS = 0V, IS = -2.8A
1. Part number IRHQ567110
2. Part number IRHQ563110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion LET
Energy Range
VDS (V)
MeV/(mg/cm2)) (MeV)
Br 37.3
285
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V
36.8 -100
-100
-100
-100
-100
-100
I 59.9
344 32.7 -100
-100
-100
-100
-75
-25
Au 82.3
351 28.5 -100
-100
-100
-30
—
—
-120
-100
-80
-60
-40
-20
0
0
5 10 15
VGS
20
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
5 Page Pre-Irradiation
IRHQ567110
600
500
400
300
200
100
0
1
P-Channel
Q2,Q3
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20 ID = -2.8A
16
Ciss
12
VDS =-80V
VDS = -50V
VDS = -20V
Coss
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 2 4 6 8 10 12
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25 ° C
0.1
1.0
VGS = 0 V
2.0 3.0 4.0 5.0
-VSD ,Source-to-Drain Voltage (V)
6.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
-VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IRHQ563110.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHQ563110 | (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT | International Rectifier |
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