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PDF K3314 Data sheet ( Hoja de datos )

Número de pieza K3314
Descripción MOSFET ( Transistor ) - 2SK3314
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! K3314 Hoja de datos, Descripción, Manual

2SK3314
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3314
Chopper Regulator, DCDC Converter Applications
Motor Drive Applications
Unit: mm
l Fast reverse recovery time
: trr = 105 ns (typ.)
l Builtin highspeed freewheeling diode
l Low drainsource ON resistance : RDS (ON) = 0.35 (typ.)
l High forward transfer admittance : |Yfs| = 9.9 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
l Enhancementmode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
15
60
150
630
15
15
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.76 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-01-25

1 page




K3314 pdf
2SK3314
RG = 25
VDD = 90 V, L = 4.76 mH
EAS
=
1
2
×
L
×
I2
×
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BVDSS
BVDSS - VDD
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5 2002-01-25

5 Page










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