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PDF IRL7NJ3802 Data sheet ( Hoja de datos )
| Número de pieza | IRL7NJ3802 | |
| Descripción | HEXFET POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD - 94721
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
BVDSS
IRL7NJ3802
12V
RDS(on)
0.0085
ID
22A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
IRL7NJ3802
12V, N-CHANNEL
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
TJ
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Operating Junction
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
22*
22*
88
50
0.4
±12
130
22
5.0
-55 to 150
300 (for 5 s)
1.0
Units
A
W
W/°C
V
mJ
A
mJ
oC
g
1
08/13/03
1 page  
IRL7NJ3802
70
60
50
40
30
20
10
0
25
LIMITED BY PACKAGE
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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