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PDF IRFE330 Data sheet ( Hoja de datos )
| Número de pieza | IRFE330 | |
| Descripción | REPETITIVE AVALANCHE AND dv/dt RATED | |
| Fabricantes | International Rectifier | |
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PD - 9.1718A
IRFE330
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U
HEXFET® TRANSISTOR
JANTXV2N6800U
[REF:MIL-PRF-19500/557]
N-CHANNEL
400Volt, 1.0Ω, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
Product Summary
Part Number
BVDSS
IRFE330
400V
Features:
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n Small footprint
n Surface Mount
n Lightweight
RDS(on)
1.0Ω
ID
3.0A
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Surface Temperature
Weight
www.irf.com
IRFE330, JANTX-, JANTXV-, 2N6800U Units
3.0
2.0 A
12
25 W
0.20 W/K
±20 V
0.51 mJ
8.4 V/ns
-55 to 150
oC
300 ( for 5 seconds)
0.42 (typical)
g
1
3/25/98
1 page  
IRFE330, JANTX-, JANTXV-, 2N6800U Device
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1 0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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1
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFE330.PDF ] | |
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