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PDF IRFE310 Data sheet ( Hoja de datos )
| Número de pieza | IRFE310 | |
| Descripción | HEXFET TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 91782
IRFE310
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6786U
HEXFET® TRANSISTOR
JANTXV2N6786U
[REF:MIL-PRF-19500/556]
N-CHANNEL
400Volt, 3.6Ω, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the thermal
and electrical performance. The lid of the package
is grounded to the source to reduce RF interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits,
and virtually any application where high reliability
is required.
Product Summary
Part Number
BVDSS
IRFE310
400V
RDS(on)
3.6Ω
ID
1.25A
Features:
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n Small footprint
n Surface Mount
n Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction
TSTG
Storage Temperature Range
Surface Temperature
Weight
www.irf.com
IRFE310, JANTX-, JANTXV-, 2N6786U Units
1.25
0.80 A
5.5
15 W
0.12
W/°C
±20 V
34 mJ
2.8 V/ns
-55 to 150
oC
300 ( for 5 seconds)
0.42 (typical)
g
1
10/9/98
1 page  
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
1.25
1.00
0.75
0.50
0.25
0.00
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1 0.10
0.05
0.02
0.01
0.1
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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| PDF Descargar | [ Datasheet IRFE310.PDF ] | |
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