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PDF IRF6628PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6628PBF | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97234
IRF6628PbF
IRF6628TRPbF
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.9mΩ@ 10V 2.5mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
31nC 12nC 4.1nC 26nC 21nC 1.9V
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MP
Description
The IRF6628PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6628PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±20
27
22 A
160
220
38 mJ
22 A
10
ID = 27A
8
6
4 TJ = 125°C
2
TJ = 25°C
0
3 4 5 6 7 8 9 10 11
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 VDS= 20V
VDS= 13V
4.0 VDS= 5.0V
3.0
ID= 22A
2.0
1.0
0.0
0
10 20 30
QG Total Gate Charge (nC)
40
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.16mH, RG = 25Ω, IAS = 22A.
1
07/11/06
1 page  
IRF6628PbF
1000
100
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10 1msec
10msec
1
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01 0.10
1.00 10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
160 3.0
140
2.5
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
160
140
120
100
2.0
ID = 100µA
1.5
ID = 250µA
ID = 1mA
ID = 1.0A
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
7.0A
8.1A
BOTTOM 22A
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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