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PDF FSQ510 Data sheet ( Hoja de datos )

Número de pieza FSQ510
Descripción Green Mode Fairchild Power Switch
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FSQ510 Hoja de datos, Descripción, Manual

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PRELIMINARY DATASHEET
August 2006
FSQ510, FSQ510H — Green Mode Fairchild Power
Switch (FPSTM) for Quasi-Resonant Converter
– Low EMI and High Efficiency
Features
ƒ Uses a DMOS Integrated Power Switch
ƒ Optimized for Quasi-Resonant Converter (QRC)
ƒ Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
ƒ High Efficiency through Minimum Voltage Switching
ƒ Extended Quasi-Resonant Switching for Wide Load
Ranges
ƒ Small Frequency Variation for Wide Load Ranges
ƒ Advanced Burst-Mode Operation for Low Standby
Power Consumption
ƒ Pulse-by-Pulse Current Limit
ƒ Various Protection Functions: Overload Protection
(OLP), Abnormal Over-Current Protection (AOCP),
Internal Thermal Shutdown (TSD) with Hysteresis
ƒ Under-Voltage Lockout (UVLO) with Hysteresis
ƒ Internal Start-up Circuit
ƒ Internal High-Voltage SenseFET (700V)
ƒ Built-in Soft Start (5ms)
Applications
ƒ Cell Phone Chargers
ƒ Auxiliary Power Supplies for PC and White Goods
Description
A Quasi-Resonant Converter (QRC) generally shows
lower EMI and higher power conversion efficiency than a
conventional hard-switched converter with a fixed
switching frequency. The FSQ510(H) is an integrated
Pulse-Width Modulation (PWM) controller and
SenseFET specifically designed for quasi-resonant off-
line Switch Mode Power Supplies (SMPS) with minimal
external components. The PWM controller includes an
integrated fixed-frequency oscillator, Under-Voltage
Lockout (UVLO), Leading Edge Blanking (LEB),
optimized gate driver, internal soft start, temperature-
compensated precise current sources for loop
compensation, and self-protection circuitry. Compared
with discrete MOSFET and PWM controller solution, the
FSQ510(H) can reduce total cost, component count,
size and weight; while simultaneously increasing
efficiency, productivity, and system reliability. This
device provides a basic platform that is well suited for
cost-effective designs of quasi-resonant switching
flyback converters.
Ordering Information
Part
Number
Package
FSQ510 7-DIP
FSQ510H 8-DIPH
Pb-
Free
Maximum Output Power (1)
Operating
Temperature
Range
Current
Limit
RDS(ON) 230VAC ± 15%(2)
(MAX)
Adapter(3)
Open
Frame(4)
85-265VAC
Adapter(3)
Open
Frame(4)
Yes -25to +85320mA 32Ω
5W
7W
4W
5W
Yes -25to +85320mA 32Ω
5W
7W
4W
5W
Replaces
Devices
FSD210B
FSD210HD
Notes:
1. The junction temperature can limit the maximum output power.
2. 230VAC or 100/115VAC with doubler.
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient.
4. Maximum practical continuous power in an open-frame design at 50°C ambient temperature.
© 2006 Fairchild Semiconductor Corporation
FSCQ510, FSCQ510H Rev. 0.0.3
www.fairchildsemi.com

1 page




FSQ510 pdf
PRELIMINARY DATASHEET
Electrical Characteristics
T
TJ = 25°C unless otherwise specified.
Symbol
Parameter
SenseFET Section
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero-Gate-Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance
CISS
COSS
tr
tf
Input Capacitance(7)
Output Capacitance(7)
Rise Time(7)
Fall Time(7)
Control Section
fS Initial Switching Frequency
ΔfS Switching Frequency Variation(7)
IFB Feedback Source Current
tBB Switching Blanking Time
Quasi-Resonant-Detection-Window
tWB Time
DMAX
DMIN
VSTART
VSTOP
tS/S
Maximum Duty Ratio
Minimum Duty Ratio
UVLO Threshold Voltage
Internal Soft-Start Time
Burst-Mode Section
VBURH
VBURL
Burst-Mode Voltage
Hys.
Conditions
VCC = 0V, ID = 100μA
VDS = 700V
TJ = 25°C, ID = 180mA
TJ = 100°C, ID = 180mA
VGS = 11V
VDS = 40V
VDS = 350V, ID = 25mA
VDS = 350V, lD = 25mA
VCC = 11V, VFB = 0.5V
- 25°C < TJ < 125°C
VCC = 11V, VFB = 0V
VCC = 11V, VFB = 1V,
Vsync oscillation
VCC = 11V, VFB = 1V,
Vsync oscillation
VCC = 11V, VFB = 3V
VCC = 11V, VFB = 0V
VFB = 0V, VCC sweep
After Turn-on, VFB = 0V
VSTR = 40V, VCC sweep
VCC = 11V, VFB sweep
Protection Section
ILIM Peak Current Limit
VSD Shutdown Feedback Voltage
IDELAY
tLEB
VOCP
TSD
Hys.
Shutdown Delay Current
Leading Edge Blanking Time(7)
Over-Current Latch Voltage(7)
Thermal Shutdown Temperature(7)
di/dt = 150mA/µs
VDS = 40V, VCC = 11V,
VFB sweep
VCC = 11V, VFB = 5V
Sync Section
VSH
VSL
Sync Threshold Voltage
tSync Sync Delay Time
VCC = 11V, VFB = 1V
VCC = 11V, VFB = 1V
Total Device Section
IOP
Operating Supply Current (Control
Part Only)
VCC = 11V, VFB = 3V
ICH Start-up Charging Current
VCC = VFB = 0V, VSTR = 40V
VSTR
Supply Voltage
VCC = VFB = 0V,
VSTR sweep
Notes:
7. These parameters, although guaranteed, are not 100% tested in production
Min.
700
87.7
200
7.2
2.8
54
8.0
6.0
3
0.75
0.65
280
4.0
4
-
-
130
0.55
0.05
180
50
Typ.
28
42
96
28
100
50
93.5
±5
225
7.7
3.0
60
8.7
6.7
5
0.85
0.75
100
320
4.5
5
360
0.8
140
60
0.7
0.1
200
500
1
Max.
100
32
48
100
±8
250
8.2
3.2
66
0
9.4
7.4
7
0.95
0.85
360
5.0
6
-
-
150
0.85
0.15
220
900
1.2
700
Unit
V
μA
pF
pF
ns
ns
kHz
%
μA
μs
μs
%
%
V
V
ms
V
V
mV
mA
V
μA
ns
V
°C
°C
V
V
ns
μA
mA
V
© 2006 Fairchild Semiconductor Corporation
FSQ510, FSQ510H Rev. 0.0.3
5
www.fairchildsemi.com

5 Page





FSQ510 arduino
Application Information
PRELIMINARY DATASHEET
Application
Output Power
Input Voltage
Output Voltage (Max Current)
Cellular Phone Charger
3.3W
Universal Input (85-265Vac)
5.1V (650mA)
Features
ƒ Low-cost, no Y-cap, cellular phone charger with CC/CV function
ƒ Meets CISPR-22 Class-B requirement at full-load condition
ƒ Meets CEC & Energy Star EPS program (arithmetic average of efficiencies at 25%, 50%, 75%, and 100% of full
load – measured at the end of 0.2Ω /1.5m load line, enclosed in plastic case, room temperature, still air)
ƒ Extremely low no-load standby power (<60mW at universal input)
Key Design Notes
ƒ The constant voltage (CV) mode control is implemented with resistors R2, R4, R5, and R6; feedback capacitor C8;
shunt regulator of U1; and opto-coupler U3.
ƒ The constant current (CC) mode control is designed with resistors R2, R4, R10, R11, R13, and R14; NPN transistor
Q1; and NTC THR1.
ƒ The divided bias winding voltage is applied to the sync pin with resistor R12, R15, and R16. The capacitor C9 is
added to delay the divided bias winding for switching at the minimum drain voltage. The diode D7 is used to avoid a
significant negative voltage on the sync pin.
1. Schematic
Figure 13. FSQ510 Schematic
© 2006 Fairchild Semiconductor Corporation
FSQ510, FSQ510H Rev. 0.0.3
11
www.fairchildsemi.com

11 Page







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