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PDF BAR63V-04W Data sheet ( Hoja de datos )
| Número de pieza | BAR63V-04W | |
| Descripción | RF PIN Diode | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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VISHAY
RF PIN Diodes - Dual, Series in SOT-323
BAR63V-04W
Vishay Semiconductors
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-04W was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diodes are
wireless, mobile and TV-systems.
2
1
3
12
3 18379
Features
• Low forward resistance
• Very small reverse capacitance
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile , wireless and TV-Applications
Mechanical Data
Case: Plastic case (SOT-323)
Weight: approx. 6.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR63V-04W
Ordering code
BAR63V-04W-GS18 or BAR63V-04W-GS08
Marking
CW4
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
IR = 10 µA
Reverse current
VR = 35 V
Forward voltage
IF = 100 mA
Diode capacitance
f = 1 MHz, VR = 0
f = 1 MHz, VR = 5 V
Symbol
VR
IF
Tj
Tstg
Value
50
100
150
- 55 to + 150
Unit
V
mA
°C
°C
Symbol
Min
Typ.
Max
Unit
VR 50
V
IR 10 nA
VF 1.2 V
CD 0.28 pF
CD
0.23 0.3
pF
Document Number 85698
Rev. 1.2, 26-Apr-04
www.vishay.com
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAR63V-04W.PDF ] | |
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