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PDF FSB50450S Data sheet ( Hoja de datos )

Número de pieza FSB50450S
Descripción smart power module
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FSB50450S Hoja de datos, Descripción, Manual

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September 2006
FSB50450S
Smart Power Module (SPM)
Features
• 500V 3.0A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level 3
General Description
FSB50450S is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50450S
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50450S is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
VPN1
VPN2
ID25
ID80
IDP
PD
VCC
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
VBS High-side Bias Voltage
VIN
TJ
TSTG
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
RθJC Junction to Case Thermal Resistance
VISO Isolation Voltage
Conditions
Rating
TJ = 25°C
TJ = 150°C
TC = 25°C
TC = 100°C
TC = 25°C, PW < 100µs
TC = 25°C, Each FRFET
Applied between VCC and COM
Applied between VB(U)-VS(U), VB(V)-VS(V),
VB(W)-VS(W)
Applied between IN and COM
500
500
1.5
1.0
3.0
14
20
20
-0.3 ~ VCC+0.3
-20 ~ 150
Each FRFET under inverter operating con-
dition (Note 1)
-50 ~ 150
8.9
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Units
V
V
A
A
A
W
V
V
V
°C
°C
°C/W
Vrms
©2006 Fairchild Semiconductor Corporation
FSB50450S Rev. A
1
www.fairchildsemi.com

1 page




FSB50450S pdf
www.DataSheet4U.com
VIN VIN
Irr
100% of ID
VDS
120% of ID
ID
10% of ID
ID VDS
tON trr
tOFF
(a) Turn-on
(b) Turn-off
Figure 4. Switching Time Definition
VCC
RBS
REH
VCC
HIN
LIN
COM
VB
HO
VS
LO
L
+
VDS
-
ID
VDC
CBS One-leg Diagram of SPM
Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)
Input Signal
UV Protection
Status
Low-side Supply, VCC
RESET
UVCCD
DETECTION
UVCCR
RESET
MOSFET Current
Figure 6. Undervoltage Protection (Low-side)
Input Signal
UV Protection
Status
High-side Supply, VBS
RESET
UVBSD
DETECTION
UVBSR
RESET
MOSFET Current
Figure 7. Undervoltage Protection (High-side)
FSB50450S Rev. A
5 www.fairchildsemi.com

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