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PDF MAAPGM0060 Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0060 | |
| Descripción | Power Amplifier | |
| Fabricantes | Tyco Electronics | |
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4.8-6.7 GHz 5W Power Amplifier
RO-P-DS-3090 —
Preliminary Information
MAAPGM0060
Features
♦ 5 Watt Saturated Output Power Level
♦ Variable Drain Voltage (6-10V) Operation
♦ GaAS MSAG™ MESFET Process
Primary Applications
♦ Point-to-Point Radio
♦ SatCom
♦ UNII and ISM Band
Description
The MAAPGM0060 is a 2-stage 5 W power amplifier with on-chip
bias networks in a bolt down ceramic package, allowing easy as-
sembly. This product is fully matched to 50 ohms on both the input
and output. It can be used as a power amplifier stage or as a driver
stage in high power applications.
Each device is 100% RF tested to ensure performance
compliance. The part is fabricated using M/A-COM’s GaAs
Multifunction Self-Aligned Gate MESFET Process. M/A-COM’s
MSAG™ process features robust silicon-like manufacturing proc-
esses, planar processing of ion implanted transistors and multiple
implant capability enabling power, low-noise, switch and digital
FETs on a single chip. The use of refractory metals and the ab-
sence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
APGM0060
YWWLLLL
Pin Number
1
2
3
4
5
6
7
8
9
10
RF Designator
No Connection
VGG
RF IN
VGG
No Connection
VDD1
VDD2
RF OUT
VDD2
VDD1
Maximum Operating Conditions 1
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
PIN
VDD
VGG
IDQ
PDISS
TJ
TSTG
Absolute Maximum
25.0
+12.0
-3.0
3
27
180
-55 to +150
1. Operation outside of these ranges may reduce product reliability.
Units
dBm
V
V
A
W
°C
°C
1 page  
4.8-6.7 GHz 5W Power Amplifier
RO-P-DS-3090 — 5/5
MAAPGM0060
Figure 8. Recommended Bias Configuration
100 Ω
VGG
0.1 µF
100 pF
RFIN
100 pF
100 pF
RFOUT
V DD2
0.1 µF
100 pF
Pin Number RF Designator
1 No Connection
2 VGG
3 RF IN
4 VGG
5 No Connection
6 VDD1
7 VDD2
8 RF OUT
9 VDD2
10 VDD1
100 pF
100 pF
V DD1
0.1 µF
Assembly Instructions:
This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board
which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically
conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of
the package to housing interface. Refer to M/A-COM Application Note #M567* for more information .
For applications where surface mount components are to be installed after the CR-15 installation, this package will not be
damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for
maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron
or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static
discharge (ESD) safe.
* Application Notes can be found by going to the Site Search Page on M/A-COM’s web page
(http://www.macom.com/search/search.jsp) and searching for the required Application Note.
Biasing Notes:
♦ The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible
(recommended < 100 mils).
♦ A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier.
Specifications subject to change without notice.
Email: [email protected]
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product informVat1io.0n0.
5 Page | ||
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| PDF Descargar | [ Datasheet MAAPGM0060.PDF ] | |
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