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PDF MA4AGSW4 Data sheet ( Hoja de datos )
| Número de pieza | MA4AGSW4 | |
| Descripción | AIGAAS SP4T PIN DIODE SWITCH | |
| Fabricantes | Tyco Electronics | |
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AlGaAs SP4T PIN
Diode Switch
V 1.00
Features
n Ultra Broad Bandwidth: 50 MHz to 50 GHz
n Functional bandwidth : 50 MHz to 70 GHz
n 1.0 dB Insertion Loss, 32 dB Isolation at 50 GHz
n Low Current consumption:
-10 mA for Low Loss State
+10 mA for Isolation
n M/A-COM’s unique patent pending AlGaAs
hetero-junction anode technology
n Silicon Nitride Passivation
n Polymide Scratch protection
MA4AGSW4 Layout
Description
M/A-COM’s MA4AGSW4 is an Aluminum-Gallium-Arsenide
anode enhanced, SP4T PIN diode switch. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
which produce less loss than conventional GaAs processes, as
much as 0.3 dB reduction in insertion loss at 50 GHz. These
devices are fabricated on a OMCVD epitaxial wafer using a
process designed for high device uniformity and extremely low
parasitics. The diodes themselves exhibit low series resistance,
low capacitance, and fast switching speed. They are fully
passivated with silicon nitride and have an additional layer of a
polymer for scratch protection. The protective coating prevents
damage to the junction and the anode airbridges during handling.
Off-chip bias circuitry is required and allows maximum design
flexibility.
Applications
The low capacitance of the PIN diodes used makes it ideal for use
in microwave multi-throw switch designs, where the series
capacitance in each off-arm will load the input. Also, the low
series resistance of the diodes helps the total insertion loss of the
devices at microwave frequencies. These AlGaAs PIN switches
are used as the switching arrays for radar systems, radiometers, and
other multi-assembly components.
Absolute Maximum Ratings1
@ TA = +25 °C (Unless otherwise
specified)
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Reverse Voltage
Bias Current
Maximum Rating
-55 °C to +125 °C
-65 °C to +150 °C
+ 23 dBm C. W.
25 V
+/- 30 mA
1. Exceeding any of these values may result in permanent
damage
Nominal Chip Dimensions
Chip
RF
J1
J2
J3
J4
J5
Chip Dimensions (µm)
X
Y
1725
1530
Pad Dimensions (µm)
X
Y
100 100
Pad Locations (µm)
X
Y
00
-736
+506
-511
+1277
-511
+1277
+736
+506
Pad Locations Relative to J1
1 page  
AlGaAs SP4T PIN Diode Switch
Assembly Considerations
The following precautions should be observed to avoid
damaging these chips.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
Electro-Static Sensitivity
These Devices are considered ESD Class1. Proper ESD
techniques should be used when handling these devices.
General Handling
The protective polymer coating on the active areas of these die
provides scratch and impact protection, particularly for the
metal airbridge which contacts the diode’s anode. Die should
primarily be handled with vacuum pickups, or alternatively
with plastic tweezers.
Mounting Techniques
These AlGaAs devices are designed to be mounted with
electrically conductive silver epoxy or with a lower
temperature solder perform, which is not rich in Sn content.
MA4AGSW4
V 1.00
Solder Die Attachment
All die attach and bonding methods should be compatible with
gold metal. Solder which does not scavange gold, such as
80Au/20Sn or Sn62/Pb36/Ag2 is recommended. Do not
expose die to a temperature greater than 300 °C for more than
10 seconds.
Electrically Conductive Epoxy
Die Attachment
Assembly can be preheated to approximately 125 °C. Use a
controlled thickness of approximately 2 mils for best electrical
and thermal conductivity. Cure epoxy as per manufacturer’s
schedule. For extended cure times, temperatures should be
kept below 150 °C.
Ribbon/Wire Bonding
Wedge thermocompression bonding or ball bonding may be
used to attach ribbons or wires to the RF bonding pads. Gold
ribbons should be 1/4 x 3 mil sq. for all RF ports for lowest
inductance and best microwave performance.
Operation of the MA4AGSW4
The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the
Remaining Isolated Ports achieves operation of the MA4AGSW Series of AlGaAs PIN Switches. The Backside Area of
the Die is the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1. Constant Current
Sources should supply the DC Control Currents. The Diode voltages at these Bias Nodes will not exceed + 1.6 volts
( + 1.4 volts typical for Supply Currents up to + 30 mA). In the Low Loss State, the Series Diode must be Forward
Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased and the
Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF to DC Isolation.
Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return
Path, (J1). A Minimum Value of | -2 V | is recommended at this Return Node, which is achievable with a Standard,
+ 5 V TTL Controlled PIN Diode Driver.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MA4AGSW4.PDF ] | |
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