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Número de pieza | DESC29-06AC | |
Descripción | HiPerFRED Epitaxial Diode | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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ADVANCE TECHNICAL INFORMATION
DSEC29-06AC
HiPerFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
IFAV = 2x15 A
VRRM = 600 V
trr = 35 ns
VRSM
V
VRRM
V
Type
ISOPLUS220TM
600 600 DSEC29-06AC
1 23
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
VISOL
FC
Weight
Conditions
TC = 140°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 0.9 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
50/60 Hz RMS; IISOL ≤ 1 mA
Mounting force
typical
Maximum Ratings
35 A
15 A
110 A
0.1 mJ
0.1
-55...+175
175
-55...+150
95
2500
11...65 / 2.4...11
3
A
°C
°C
°C
W
V~
N / lb
g
Symbol
IR Q
VF R
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 15 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
100 µA
0.5 mA
1.49 V
2.04 V
1.6 K/W
0.6 K/W
35 ns
4 4.9
A
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
R Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
S Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
1
2
3
* Patent pending
Isolated back surface *
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Low cathode to tab capacitance (<15pF)
l Planar passivated chips
l Very short recovery time
l Extremely low switching losses
l Low IRM-values
l Soft recovery behaviour
l Epoxy meets UL 94V-0
Applications
l Antiparallel diode for high frequency
switching devices
l Antisaturation diode
l Snubber diode
l Free wheeling diode in converters
and motor control circuits
l Rectifiers in switch mode power
supplies (SMPS)
l Inductive heating
l Uninterruptible power supplies (UPS)
l Ultrasonic cleaners and welders
Advantages
l Avalanche voltage rated for reliable
operation
l Soft reverse recovery for low EMI/RFI
l Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IXYS reserves the right to change limits, test conditions and dimensions.
98785 (12/00)
© 2000 IXYS All rights reserved
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet DESC29-06AC.PDF ] |
Número de pieza | Descripción | Fabricantes |
DESC29-06AC | HiPerFRED Epitaxial Diode | IXYS Corporation |
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