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PDF IRIS-W6753 Data sheet ( Hoja de datos )
| Número de pieza | IRIS-W6753 | |
| Descripción | INTEGRATED SWITCHER | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRIS-W6753
Features
• 6-pin SIP type full molded package, optimum IC for low-height SMPS, with
distance between high and low voltage pin 1.8 mm with pin elimination.
INTEGRATED SWITCHER
Package Outline
• Oscillator is provided on the monolithic control with adopting On-Chip
Trimming Technology
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
•Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PWM mode ( 22 kHz)
• UVLO Burst Standby
• Two operational modes by auto switching functions according to load
TO-220 Fullpack (7 Lead modified)
For middle~heavy load operation : QR mode
For light~middle load operation : 1 Bottom Skip mode
• Various kinds of protection functions
Pulse-by-Pulse Overcurrent Protection (OCP)
Overvoltage Protection with Latch mode (OVP)
Key Specifications
MOSFET RDS(ON)
T ype
VDSS(V) MAX
AC input(V)
P out (W )
Note 1
Overload Protection with Latch mode (OLP)
230 15%
120
The maximum limit of on-time
IRIS-W6753 650
85 to 264
58
Description
IRIS-W6753 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM)
fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and
standardizing of a power supply system reducing external component count and simplifying the circuit design.
Typical Connection Diagram
Note 1:
The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to
140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that
of the above.
www.irf.com
1 page  
IRIS-W6753
Electrical characteristics for MOSFET (Ta=25 deg C)
Symbol
VDSS
IDSS
RDS(ON)
tf
ch-F
Definition
Drain-to-Source breakdown voltage
Drain leakage current
On-resistance
Switching time
Thermal resistance
Terminals
1-3
1-3
1-3
1-3
-
Ratings
MIN TYP MAX
650 -
-
- - 300
- - 1.65
- - 400
- - 2.0
Units
V
µA
nSec
/W
Note
ID=300µA
VDS=650V
ID=1.4A
-
Between channel
and internal frame
IRIS-W6753
A.S.O. temperature derating coefficient curve
100
80
60
40
20
0
0 20 40 60 80 100 120
Internal frame temperature TF [ ]
IRIS-W6753
MOS FET A.S.O. curve
100
Drain current
limit by ON
resistance
10
1
0.1ms
1ms
0.1
1
10 100
Drain-to-Source Voltage VDS[V]
1000
www.irf.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRIS-W6753.PDF ] | |
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