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PDF AO3701 Data sheet ( Hoja de datos )
| Número de pieza | AO3701 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO3701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3701 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications. It is
ESD protected. Standard Product AO3701 is Pb-free (meets
ROHS & Sony 259 specifications). AO3701L is a Green
Product ordering option. AO3701 and AO3701L are
electrically identical.
Features
VDS (V) = -20V
ID = -3A (VGS = -10V)
RDS(ON) < 80mΩ (VGS = -10V)
RDS(ON) < 100mΩ (VGS = -4.5V)
RDS(ON) < 145mΩ (VGS = -2.5V)
ESD Rating: 2000V HBM
SCHOTTKY
SOT-23-5
Top View
G 15
S2
A 34
D
K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-20
±12
-3
-2.3
-10
1.14
0.72
-55 to 150
Typ
80.3
117
43
109.4
136.5
58.5
Schottky
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO3701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
1
0.1
0.01
25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF (Volts)
Figure 12: Schottky Forward Characteristics
100
f = 1MHz
80
60
40
20
0
0 5 10 15 20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.5 1.0E-02
0.4 1.0E-03
IF=0.5A
0.3
1.0E-04
VR=16V
0.2 1.0E-05
0.1
0
25 50 75 100 125
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
150
1.0E-06
0
25 50 75 100 125 150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=135°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO3701.PDF ] | |
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