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PDF FSB50325 Data sheet ( Hoja de datos )

Número de pieza FSB50325
Descripción Smart Power Module
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FSB50325
Smart Power Module (SPM)
May 2005
SPM TM
Features
• 250V 3.0A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
General Description
FSB50325 is a tiny smart power module (SPMTM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50325
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50325 is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
VPN
ID25
ID80
IDP
PD
VCC
VBS
VIN
TJ
TSTG
RθJC
VISO
Parameter
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
Junction to Case Thermal Resistance
Isolation Voltage
Conditions
TC = 25°C
TC = 80°C
TC = 25°C, PW < 100µs
TC = 80°C, Each FRFET
Applied between VCC and COM
Applied between VB and VS
Applied between IN and COM
Each FRFET under inverter
operating condition (Note 1)
60Hz, Sinusoidal, 1 minute,
Connection pins to heatsink
Rating
250
1.5
1.0
3.0
4.5
20
20
-0.3 ~ VCC+0.3
-20 ~ 125
-50 ~ 150
10.2
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
Vrms
©2005 Fairchild Semiconductor Corporation
FSB50325 Rev. B
1
www.fairchildsemi.com

1 page




FSB50325 pdf
VIN VIN
Irr
VDS 100% of ID
120% of ID
ID
10% of ID
ID VDS
tON trr
tOFF
(a) Turn-on
(b) Turn-off
Figure 4. Switching Time Definition
VCC
RBS
REH
VCC
HIN
LIN
COM
VB
HO
VS
LO
L
+
VDS
-
ID
VDC
CBS One-leg Diagram of SPM
Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)
Input Signal
UV Protection
Status
Low-side Supply, VCC
RESET
UVCCD
DETECTION
UVCCR
RESET
MOSFET Current
Figure 6. Undervoltage Protection (Low-side)
Input Signal
UV Protection
Status
High-side Supply, VBS
RESET
UVBSD
DETECTION
UVBSR
RESET
MOSFET Current
Figure 7. Undervoltage Protection (High-side)
FSB50325 Rev. B
5 www.fairchildsemi.com

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