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PDF BLV2N60 Data sheet ( Hoja de datos )
| Número de pieza | BLV2N60 | |
| Descripción | N-channel Enhancement Mode Power MOSFET | |
| Fabricantes | SHANGHAI BELLING | |
| Logotipo |  |
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BLV2N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
BVDSS
RDS(ON)
ID
600V
4.4Ω
2A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
PD
EAS
IAR
EAR
Tj
TSDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value
600
+ 30
2
1.26
8
23
0.18
40
2
2.3
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to Case Max.
Thermal Resistance, Junction to Ambient Max.
http://www.belling.com.cn
-1-
Total 6 Pages
Value
5.5
62.5
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
oC
oC
Units
℃/ W
℃/ W
2008.08.08
1 page  
Typical Characteristics （continued）
BLV2N60
N-channel Enhancement Mode Power MOSFET
Fig 9. Maximum Safe Operating Area
Fig 10. Transient Thermal Response Curve
http://www.belling.com.cn
-5-
Total 6 Pages
2008.08.08
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BLV2N60.PDF ] | |
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