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PDF TGA2511 Data sheet ( Hoja de datos )
| Número de pieza | TGA2511 | |
| Descripción | X-Band Low Noise Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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X-Band Low Noise Amplifier
Advance Product Information
July 14, 2005
TGA2511
Key Features
• Typical Frequency Range: 6 - 14 GHz
• 1.3 dB Nominal Noise Figure
• 20 dB Nominal Gain
• Bias: 5 V, 160 mA Gate Bias
5 V, 80 mA Self Bias
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 2.05 x 1.20 x 0.10 mm
(0.081 x 0.047 x 0.004 in)
Product Description
The TriQuint TGA2511 is a wideband LNA with
AGC amplifier for EW, ECM, and RADAR
receiver or driver amplifier applications.
Offering high gain 20dB typical from 6-14GHz,
the TGA2511provides excellent noise
performance with typical midband NF 1.3dB,
while the balanced topology offers good return
loss typically 15dB.
The TGA2511 is designed for maximum ease
of use. The large input FETs can handle up to
21dBm input power reliably. The part is also
assembled in self-biased mode, using a single
+5V supply connection from either side of the
chip, or in gate biased mode, allowing the user
to control the current for a particular
applications.
In self-biased mode the TGA2511 offers 6dBm
typical P1dB, while in gate-biased mode the
typical P1dB is over 12dBm. The small size of
2.46mm2 allows ease of compaction into Multi-
Chip-Modules (MCMs).
Primary Applications
• X-Band Radar
• EW, ECM
• Point-to-Point Radio
Measured Fixtured Data
Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA
30
GAIN
20
10
0
-10 IRL
ORL
-20
-30
4 6 8 10 12 14 16 18
Frequency (GHz)
5
The TGA2511 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
4
3
2
1
0
4 6 8 10 12 14 16 18
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
1 page  
0
-5
-10
-15
-20
-25
-30
-35
4
0
-5
-10
-15
-20
-25
-30
-35
4
Advance Product Information
July 14, 2005
Measured Fixtured Data
TGA2511
Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA
6 8 10 12 14 16 18
Frequency (GHz)
6 8 10 12 14 16 18
Frequency (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
5 Page 
Advance Product Information
July 14, 2005
TGA2511
Recommended Chip Assembly Diagram
Option 1: Self Bias - No Gain Control
Vd
RF In
100pF
RF Out
All DC connections may be brought in from either side of the chip (Use Pad 6 or 8)
0.01uF external Cap is recommended on Drain
Bias: Vd = 5V (Id = ~80mA)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGA2511.PDF ] | |
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