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Número de pieza | TGA2501 | |
Descripción | Power Amplifier | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
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Advance Product Information
April 5, 2006
6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier
TGA2501
Preliminary Measured Performance
Bias Conditions: VD = 8V ID = 1.2A
30 20
S21 S11 S22
28 15
26 10
24 5
22 0
20 -5
18 -10
16 -15
14 -20
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Key Features and Performance
• 34.5 dBm Midband Pout
• 24 dB Nominal Gain
• 10 dB Typical Input Return Loss
• 5 dB Typical Output Return Loss
• Bias Conditions: 8V @ 1.2A
• 0.25 µm Ku pHEMT 2MI
• Chip dimensions: 4.3 x 2.9 x 0.1 mm
(170 x 115 x 4 mils)
Primary Applications
• X-Ku Point-to-Point
• ECCM
36 60
35 55
34 50
33 45
32
Psat
40
PAE
31 35
30 30
29 25
28 20
27 15
26 10
6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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Advance Product Information
April 5, 2006
Fixtured Performance
TGA2501
7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
8 GHz
11 GHz
13 GHz
15 GHz
14 15 16 17 18 19 20 21 22 23 24
Pout / Tone (dBm)
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
5
5 Page Advance Product Information
April 5, 2006
TGA2501
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet TGA2501.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGA2501 | Power Amplifier | TriQuint Semiconductor |
TGA2501-GSG | 2.8 Watt 6-18 GHz Power Amplifier | TriQuint Semiconductor |
TGA2501-TS | 6 - 18 GHz 2.8 Watt Power Amplifier | TriQuint Semiconductor |
TGA2502 | Power Amplifier | TriQuint Semiconductor |
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