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PDF TGA2501 Data sheet ( Hoja de datos )

Número de pieza TGA2501
Descripción Power Amplifier
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGA2501 Hoja de datos, Descripción, Manual

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Advance Product Information
April 5, 2006
6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier
TGA2501
Preliminary Measured Performance
Bias Conditions: VD = 8V ID = 1.2A
30 20
S21 S11 S22
28 15
26 10
24 5
22 0
20 -5
18 -10
16 -15
14 -20
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Key Features and Performance
• 34.5 dBm Midband Pout
• 24 dB Nominal Gain
• 10 dB Typical Input Return Loss
• 5 dB Typical Output Return Loss
• Bias Conditions: 8V @ 1.2A
• 0.25 µm Ku pHEMT 2MI
• Chip dimensions: 4.3 x 2.9 x 0.1 mm
(170 x 115 x 4 mils)
Primary Applications
• X-Ku Point-to-Point
• ECCM
36 60
35 55
34 50
33 45
32
Psat
40
PAE
31 35
30 30
29 25
28 20
27 15
26 10
6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TGA2501 pdf
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Advance Product Information
April 5, 2006
Fixtured Performance
TGA2501
7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
8 GHz
11 GHz
13 GHz
15 GHz
14 15 16 17 18 19 20 21 22 23 24
Pout / Tone (dBm)
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TGA2501 arduino
Advance Product Information
April 5, 2006
TGA2501
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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