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PDF FDY2001PZ Data sheet ( Hoja de datos )
| Número de pieza | FDY2001PZ | |
| Descripción | Dual P-Channel Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
January 2006
FDY2001PZ
Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Dual P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = – 2.5v.
Applications
• Li-Ion Battery Pack
Features
• – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V
RDS(ON) = 12Ω @ VGS = – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
6
5
4
S1 1
G1 2
1
2
3
D2 3
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1
TJ, TSTG
Operating and Storage Junction Temperature
Range
Ratings
– 20
±8
– 150
– 1000
625
446
–55 to +150
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1
Package Marking and Ordering Information
Device Marking
Device
Reel Size
B
FDY2001PZ
7 ’’
200
280
Tape width
8 mm
6 D1
5 G2
4 S2
Units
V
V
mA
mW
°C
°C/W
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
FDY2001PZ Rev A
www.fairchildsemi.com
1 page  
Dimensional Outline and Pad Layout
1.70
1.50
0.30
0.15
64
0.50
0.50
1.20 BSC
(0.20)
1
1.70
1.55
1.25
1.80
3
0.50
1.00
0.60
0.56
0.30 0.55
LAND PATTERN RECOMMENDATION
SEE DETAIL A
0.18
0.10
0.20 BSC
0.35 BSC
0.10
0.00
DETAIL A
SCALE 2 : 1
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
FDY2001PZ Rev A
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDY2001PZ.PDF ] | |
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