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Número de pieza | PD54003S-E | |
Descripción | RF POWER transistor | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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PD54003-E
PD54003S-E
RF POWER transistor, LDMOST plastic family
N-channel enhancement-mode, lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 3W with 12dB gain @ 500MHz
■ New RF plastic package
Description
The PD54003 is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7V in common source mode at
frequencies of up to 1GHz.
The PD54003 features the excellent gain, linearity
and reliability of ST’s latest LDMOS technology,
the PowerSO-10RF. The superior linearity
performance makes it an ideal solution for
portable radios.
The PowerSO-10RF is the first true Surface-
mount Device (SMD) plastic RF power package. It
is based on the highly reliable PowerSO-10, the
first ST-originated, JEDEC-approved, high-power
SMD package.
It has been optimized specifically for RF
requirements, and offers excellent RF
performance as well as ease of assembly.
Surface-mount recommendations are available in
Application Note AN1294 (see www.st.com/rf).
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Order codes
Part number
PD54003-E
PD54003S-E
PD54003TR-E
PD54003STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
March 2006
Rev 1
1/28
www.st.com
28
1 page PD54003-E, PD54003S-E
3 Impedance
Figure 1. Current conventions
Impedance
Table 5.
Impedance data
PD54003-E
PD54003S-E
Freq. (MHz)
480
500
520
ZIN (Ω)
ZDL(Ω)
2.245 - j 0.077 3.436 + j 1.013
1.553 - j 1.251 2.661 + j 0.139
1.993 - j 1.098 2.564 + j 0.656
Freq. (MHz)
480
500
520
ZIN (Ω)
ZDL(Ω)
1.400 - j 3.986 2.805 + j 2.724
1.209 - j 2.451 3.192 + j 3.147
1.534 - j 2.104 2.524 + j 2.369
5/28
5 Page PD54003-E, PD54003S-E
Figure 18. Output power vs.
bias current
Typical performance
Figure 19. Drain efficiency vs. bias current
3.5
3.4
3.3
3.2
3.1
3
2.9
2.8
2.7
2.6
0
520 MHz
500 MHz
480 MHz
Pin= 22 dBm
Vdd= 7.5 V
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT(mA)
60
50 520 MHz
40
500 MHz
480 MHz
30
20
10
0
Pin= 22 dBm
Vdd= 7.5 V
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
11/28
11 Page |
Páginas | Total 28 Páginas | |
PDF Descargar | [ Datasheet PD54003S-E.PDF ] |
Número de pieza | Descripción | Fabricantes |
PD54003S-E | RF POWER transistor | ST Microelectronics |
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