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PDF IRGP50B60PDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP50B60PDPBF | |
| Descripción | WARP2 SERIES IGBT | |
| Fabricantes | International Rectifier | |
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SMPS IGBT
PD - 95968
IRGP50B60PDPbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead- Free
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
E
C
G
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
1
Max.
600
75
42
150
150
50
25
100
±20
370
150
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0 (0.21)
Max.
0.34
0.64
–––
40
–––
Units
°C/W
g (oz)
12/1/04
www.irf.com
1 page  
IRGP50B60PDPbF
1800
1600
1400
EOFF
1200
1000
800
EON
600
400
200
0
10 20 30 40
RG (Ω)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
35
30
25
20
15
10
5
1000
tdOFF
100
tF
tR
tdON
10
0
10 20 30 40
RG (Ω)
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
1000
Coes
100
Cres
0
0 100 200 300 400 500 600 700
Voltage (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
10
0
100 200 300 400 500
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
14
VCE = 480V
12
10
8
6
4
2
0
0 50 100 150 200 250 300
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 33A
www.irf.com
1.5
1.3
1.0
0.8
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
5
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| PDF Descargar | [ Datasheet IRGP50B60PDPBF.PDF ] | |
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