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PDF IRGP4055DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4055DPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
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PD - 97222
PDP TRENCH IGBT IRGP4055DPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ 110A
300
1.70
IRP max @ TC= 25°C c
TJ max
270
150
CC
V
V
A
°C
G
E
n-channel
G
Gate
E
C
G
TO-247AC
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT) d
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
±30
110
60
270
255
102
2.04
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
1.45
0.20
–––
2.0 (0.07)
Max.
0.48
2.5
–––
70
–––
www.irf.com
Units
V
A
W
W/°C
°C
N
Units
°C/W
g (oz)
1
06/14/06
1 page  
IRGP4055DPbF
100000
10000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
16
14 IC = 30A
12 IC = 35A
10
1000
8
100
Coes
Cres
6
4
2
10
0
50 100 150 200
VCE, Collector-toEmitter-Voltage(V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
0
0 25 50 75 100 125 150
Q G, Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
1
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.1
1
t1,Rectangular Pulse Duration (Seconds)
.
10
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Diode)
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5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRGP4055DPBF.PDF ] | |
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