|
|
PDF IRH7450SE Data sheet ( Hoja de datos )
| Número de pieza | IRH7450SE | |
| Descripción | TRANSISTOR N-CHANNEL | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRH7450SE (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Previouswww.DataSheet4U.com Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD 9.1390
REPETITIVE AVALANCHE AND dv/dt RATED
IRH7450SE
HEXFET® TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the (SEE) pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BV DSS
IRH7450SE
500V
RDS(on)
0.51Ω
ID
11A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Pre-Radiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRH7450SE
Units
Continuous Drain Current
Continuous Drain Current
11
7.0 A
Pulsed Drain Current
44
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/K
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy
500 mJ
Avalanche Current
11 A
Repetitive Avalanche Energy
15 mJ
Peak Diode Recovery dv/dt
3.5 V/ns
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.0063 in. (1.6mm) from case for 10 sec.)
Weight
11.5 (typical)
g
To Order
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IRH7450SE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRH7450SE | TRANSISTOR N-CHANNEL | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |